MTP27N10E |
RFQ for MTP27N10E Required Field |
 |
| Product | Manufacturers | Pack | D/C |
| MTP27N10E | - | TO-220 | 06+ |
This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
Features |
| • Avalanche Energy Specified• SourcetoDrain Diode Recovery Time Comparable to Discrete Fast Recovery Diode• Diode is Characterized for Use in Bridge Circuits• IDSS and VDS(on) Specified at Elevated Temperature• Device Marking: MTP27N10E |
|
Rating |
Symbol |
Value |
Unit |
| DraintoSource Voltage |
VDSS |
100 |
Vdc |
| DraintoGate Voltage (RGS =1.0 M) |
VDGR |
100 |
Vdc |
| GatetoSource Voltage - Continuous - NonRepetitive (tp 10 ms) |
VGS VGSM |
± 20 ± 40 |
Vdc VPK |
| Drain Current - Continuous@ 25°C - Continuous@ 100°C - Single Pulse (tp 10 s) |
ID ID IDM |
27 17 95 |
Adc Apk |
| Total Power Dissipation @ 25°C Derate above 25°C |
PD |
104 0.83 |
Watts W/°C |
| Operating and Storage Temperature Range |
TJ, Tstg |
55 to 150 |
°C |
| Single Pulse DraintoSource Avalanche Energy TJ = 25°C (VDD =75 Vdc, VGS =10Vdc,PeakIL =27 Apk L =0.3mH, RG = 25 |
EAS |
109 |
mJ |
